Invention Grant
- Patent Title: Semiconductor device and method for making the same
- Patent Title (中): 半导体装置及其制造方法
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Application No.: US12535277Application Date: 2009-08-04
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Publication No.: US08030753B2Publication Date: 2011-10-04
- Inventor: Takayuki Ishihara
- Applicant: Takayuki Ishihara
- Applicant Address: JP Kyoto
- Assignee: Rohm Co., Ltd.
- Current Assignee: Rohm Co., Ltd.
- Current Assignee Address: JP Kyoto
- Agency: Hamre, Schumann, Mueller & Larson, P.C.
- Priority: JP2008-203869 20080807
- Main IPC: H01L33/00
- IPC: H01L33/00 ; H01L23/482
Abstract:
A semiconductor device includes a semiconductor element, an electrode formed on the semiconductor element, and a protective member covering the semiconductor element. The protective member is formed with a through-hole facing the electrode. In the through-hole, a wiring pattern is formed to be electrically connected to the electrode.
Public/Granted literature
- US20100032707A1 SEMICONDUCTOR DEVICE AND METHOD FOR MAKING THE SAME Public/Granted day:2010-02-11
Information query
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