Invention Grant
- Patent Title: Forming a semiconductor package including a thermal interface material
- Patent Title (中): 形成包括热界面材料的半导体封装
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Application No.: US11824188Application Date: 2007-06-29
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Publication No.: US08030757B2Publication Date: 2011-10-04
- Inventor: Mukul Renavikar , Daewoong Suh , Carl Deppisch , Abhishek Gupta
- Applicant: Mukul Renavikar , Daewoong Suh , Carl Deppisch , Abhishek Gupta
- Applicant Address: US CA Santa Clara
- Assignee: Intel Corporation
- Current Assignee: Intel Corporation
- Current Assignee Address: US CA Santa Clara
- Agency: Trop, Pruner & Hu, P.C.
- Main IPC: H01L23/10
- IPC: H01L23/10
Abstract:
In one embodiment, the present invention includes a method for placing a thermal interface material (TIM) between a die including a backside metallic (BSM) layer including copper (Cu) and a heat spreader having a contact surface including Cu, where the TIM is formed of an alloy including indium (In) and tin (Sn), and bonding the TIM to the die and the heat spreader to form at least one quaternary intermetallic compound (IMC) layer. Other embodiments are described and claimed.
Public/Granted literature
- US20090001557A1 Forming a semiconductor package including a thermal interface material Public/Granted day:2009-01-01
Information query
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