Invention Grant
US08030762B2 Light emitting diode package having anodized insulation layer and fabrication method therefor
有权
具有阳极氧化绝缘层的发光二极管封装及其制造方法
- Patent Title: Light emitting diode package having anodized insulation layer and fabrication method therefor
- Patent Title (中): 具有阳极氧化绝缘层的发光二极管封装及其制造方法
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Application No.: US11730966Application Date: 2007-04-05
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Publication No.: US08030762B2Publication Date: 2011-10-04
- Inventor: Young Ki Lee , Seog Moon Choi , Sang Hyun Shin
- Applicant: Young Ki Lee , Seog Moon Choi , Sang Hyun Shin
- Applicant Address: KR Gyunggi-do
- Assignee: Samsung LED Co., Ltd.
- Current Assignee: Samsung LED Co., Ltd.
- Current Assignee Address: KR Gyunggi-do
- Agency: McDermott Will & Emery LLP
- Priority: KR10-2006-0031093 20060405
- Main IPC: H01L23/34
- IPC: H01L23/34 ; H01L33/00

Abstract:
An LED package having an anodized insulation layer which increases heat radiation effect to prolong the lifetime LEDs and maintains high luminance and high output, and a method therefor. The LED package includes an Al substrate having a reflecting region and a light source mounted on the substrate and connected to patterned electrodes. The package also includes an anodized insulation layer formed between the patterned electrodes and the substrate and a lens covering over the light source of the substrate. The Al substrate provides superior heat radiation effect of the LED, thereby significantly increasing the lifetime and light emission efficiency of the LED.
Public/Granted literature
- US20070235743A1 Light emitting diode package having anodized insulation layer and fabrication method therefor Public/Granted day:2007-10-11
Information query
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