Invention Grant
US08030780B2 Semiconductor substrates with unitary vias and via terminals, and associated systems and methods
有权
具有单一通孔和通孔端子的半导体衬底,以及相关系统和方法
- Patent Title: Semiconductor substrates with unitary vias and via terminals, and associated systems and methods
- Patent Title (中): 具有单一通孔和通孔端子的半导体衬底,以及相关系统和方法
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Application No.: US12253121Application Date: 2008-10-16
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Publication No.: US08030780B2Publication Date: 2011-10-04
- Inventor: Kyle K. Kirby , Kunal R. Parekh
- Applicant: Kyle K. Kirby , Kunal R. Parekh
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Perkins Coie LLP
- Main IPC: H01L23/52
- IPC: H01L23/52 ; H01L23/48 ; H01L29/40

Abstract:
Semiconductor substrates with unitary vias and via terminals, and associated systems and methods are disclosed. A representative method in accordance with a particular embodiment includes forming a blind via in a semiconductor substrate, applying a protective layer to a sidewall surface of the via, and forming a terminal opening by selectively removing substrate material from an end surface of the via, while protecting from removal substrate material against which the protective coating is applied. The method can further include disposing a conductive material in both the via and the terminal opening to form an electrically conductive terminal that is unitary with conductive material in the via. Substrate material adjacent to the terminal can then be removed to expose the terminal, which can then be connected to a conductive structure external to the substrate.
Public/Granted literature
- US20100096759A1 SEMICONDUCTOR SUBSTRATES WITH UNITARY VIAS AND VIA TERMINALS, AND ASSOCIATED SYSTEMS AND METHODS Public/Granted day:2010-04-22
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