Invention Grant
- Patent Title: Semiconductor integrated circuit
- Patent Title (中): 半导体集成电路
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Application No.: US12875612Application Date: 2010-09-03
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Publication No.: US08030961B2Publication Date: 2011-10-04
- Inventor: Katsuki Matsudera
- Applicant: Katsuki Matsudera
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Turocy & Watson, LLP
- Priority: JP2007-173180 20070629
- Main IPC: H03K17/16
- IPC: H03K17/16 ; H03K19/003

Abstract:
A semiconductor integrated circuit includes a control signal generating circuit which is configured to set, at least at a time of a first state, first and fifth control signals at a first voltage level, and second, third and fourth control signals at a second voltage level, and to set, at a time of a second state, the first to fourth control signals at the first voltage level, and the fifth control signal at an arbitrary voltage level.
Public/Granted literature
- US20100327904A1 SEMICONDUCTOR INTEGRATED CIRCUIT Public/Granted day:2010-12-30
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