Invention Grant
- Patent Title: Buffer amplifier
- Patent Title (中): 缓冲放大器
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Application No.: US12504127Application Date: 2009-07-16
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Publication No.: US08031002B2Publication Date: 2011-10-04
- Inventor: Byeong Hak Jo , Yoo Sam Na , Yoo Hwan Kim
- Applicant: Byeong Hak Jo , Yoo Sam Na , Yoo Hwan Kim
- Applicant Address: KR Gyunggi-do
- Assignee: Samsung Electro-Mechanics Co., Ltd.
- Current Assignee: Samsung Electro-Mechanics Co., Ltd.
- Current Assignee Address: KR Gyunggi-do
- Agency: Lowe, Hauptman, Ham & Berner, LLP
- Priority: KR10-2008-0122091 20081203
- Main IPC: H03F3/26
- IPC: H03F3/26

Abstract:
A buffer amplifier has high input impedance and is less affected by temperature by supplying independent bias power to each of amplification units. The buffer amplifier includes a bias supply unit supplying bias power having a preset voltage level, an amplification unit receiving preset driving power and the bias power from the bias supply unit to amplify an input signal, and a compensation unit compensating for current unbalance of the driving power supplied to the amplification unit.
Public/Granted literature
- US20100134188A1 BUFFER AMPLIFIER Public/Granted day:2010-06-03
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