Invention Grant
US08031217B2 Processes and structures for IC fabrication 有权
IC制造的工艺和结构

  • Patent Title: Processes and structures for IC fabrication
  • Patent Title (中): IC制造的工艺和结构
  • Application No.: US12484229
    Application Date: 2009-06-14
  • Publication No.: US08031217B2
    Publication Date: 2011-10-04
  • Inventor: Jayna Sheats
  • Applicant: Jayna Sheats
  • Agent Tue Nguyen
  • Main IPC: B41J2/335
  • IPC: B41J2/335
Processes and structures for IC fabrication
Abstract:
The present invention discloses methods and apparatuses for the separations of IC fabrication and assembling of separated IC components to form complete IC structures. In an embodiment, the present fabrication separation of an IC structure into multiple discrete components can take advantages of dedicated IC fabrication facilities and achieve more cost effective products. In another embodiment, the present chip assembling provides high density interconnect wires between bond pads, enabling cost-effective assembling of small chip components. In an aspect, the present process forms interconnect wires on a thermal decomposable adhesive, and after positioning the wires at proper bond pad locations, releases the interconnect wires onto the bond pads.
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