Invention Grant
- Patent Title: Active matrix substrate and method of manufacturing the same
- Patent Title (中): 有源矩阵基板及其制造方法
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Application No.: US12353480Application Date: 2009-01-14
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Publication No.: US08031283B2Publication Date: 2011-10-04
- Inventor: Toshio Araki , Osamu Miyakawa , Nobuaki Ishiga , Shingo Nagano
- Applicant: Toshio Araki , Osamu Miyakawa , Nobuaki Ishiga , Shingo Nagano
- Applicant Address: JP Tokyo
- Assignee: Mitsubishi Electric Corporation
- Current Assignee: Mitsubishi Electric Corporation
- Current Assignee Address: JP Tokyo
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2008-020505 20080131
- Main IPC: G02F1/136
- IPC: G02F1/136

Abstract:
An active matrix substrate according to one aspect of the present invention is a TFT array substrate including a TFT. The active matrix substrate includes a gate signal line electrically connected to a gate electrode of the TFT, a first insulating film formed above the gate signal line, an auxiliary capacitance electrode formed above the first insulating film and supplied with a common potential, a second insulating film formed above the auxiliary capacitance electrode, a source signal line formed above the second insulating film and electrically connected to a source electrode of the TFT, a third insulating film formed above the source signal line, and a pixel electrode formed above the third insulating film so that the pixel electrode overlaps with a part of the auxiliary capacitance electrode.
Public/Granted literature
- US20090195723A1 ACTIVE MATRIX SUBSTRATE AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2009-08-06
Information query
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