Invention Grant
US08031520B2 Method for reading and programming a charge-trap memory device compensated for an array/second-bit/neighbor-bit effect
有权
用于读取和编程补偿阵列/第二位/相邻位效应的电荷陷阱存储器件的方法
- Patent Title: Method for reading and programming a charge-trap memory device compensated for an array/second-bit/neighbor-bit effect
- Patent Title (中): 用于读取和编程补偿阵列/第二位/相邻位效应的电荷陷阱存储器件的方法
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Application No.: US12195713Application Date: 2008-08-21
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Publication No.: US08031520B2Publication Date: 2011-10-04
- Inventor: Chun-Yu Liao
- Applicant: Chun-Yu Liao
- Applicant Address: TW Hsinchu
- Assignee: Macronix International Co., Ltd.
- Current Assignee: Macronix International Co., Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: Thomas|Kayden
- Main IPC: G11C16/34
- IPC: G11C16/34
Abstract:
A method for programming a memory is provided. The memory includes a number of cells and has a preset PV level for a target cell. The method includes programming a first-side of the target cell to have a Vt level not lower than the preset PV level; reading a Vt level of a second-side of the target cell and accordingly obtaining a corrected PV level corresponding to the first-side; and programming the first-side of the target cell to have a Vt level not lower than the corresponding corrected PV level.
Public/Granted literature
- US20100046296A1 METHOD FOR READING AND PROGRAMMING A MEMORY Public/Granted day:2010-02-25
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