Invention Grant
- Patent Title: Semiconductor device
- Patent Title (中): 半导体器件
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Application No.: US12710394Application Date: 2010-02-23
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Publication No.: US08031546B2Publication Date: 2011-10-04
- Inventor: Binhaku Taruishi , Hiroki Miyashita , Ken Shibata , Masashi Horiguchi
- Applicant: Binhaku Taruishi , Hiroki Miyashita , Ken Shibata , Masashi Horiguchi
- Applicant Address: JP Kawasaki-shi JP Mobara-shi
- Assignee: Renesas Electronics Corporation,Hitachi Device Engineering Co., Ltd.
- Current Assignee: Renesas Electronics Corporation,Hitachi Device Engineering Co., Ltd.
- Current Assignee Address: JP Kawasaki-shi JP Mobara-shi
- Agency: Miles & Stockbridge P.C.
- Priority: JP11-245821 19990831
- Main IPC: G11C7/00
- IPC: G11C7/00

Abstract:
In a semiconductor device having a data input buffer capable of inputting write data to each of memory units, the data input buffer is changed from an inactive state to an active state after the reception of instruction for a write operation effected on the memory unit. The data input buffer is a differential input buffer having interface specs based on SSTL, for example, which is brought to an active state by the turning on of a power switch to thereby cause a through current to flow and receives a signal therein while immediately following a small change in small-amplitude signal. Since the input buffer is brought to the active state only when the write operation's instruction for the memory unit is provided, the data input buffer is rendered inactive in advance, before the instruction for the write operation is provided, whereby wasteful power consumption is reduced. In another aspect, power consumption is reduced by changing from the active to the inactive state in a time period from a write command issuing to a next command issuing.
Public/Granted literature
- US20100149883A1 SEMICONDUCTOR DEVICE Public/Granted day:2010-06-17
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