Invention Grant
- Patent Title: Voltage regulator circuit for a memory circuit
- Patent Title (中): 用于存储电路的稳压电路
-
Application No.: US12132098Application Date: 2008-06-03
-
Publication No.: US08031550B2Publication Date: 2011-10-04
- Inventor: Chung Zen Chen
- Applicant: Chung Zen Chen
- Applicant Address: TW Hsinchu
- Assignee: Elite Semiconductor Memory Technology Inc.
- Current Assignee: Elite Semiconductor Memory Technology Inc.
- Current Assignee Address: TW Hsinchu
- Agency: Connolly Bove Lodge & Hutz LLP
- Main IPC: G11C5/14
- IPC: G11C5/14

Abstract:
A voltage regulator circuit for a memory circuit comprises a voltage divider, a capacitor, an active-mode voltage regulator and a standby-mode voltage regulator. The active-mode voltage regulator is always on while in active mode, and turned on whenever a refresh is requested. The standby-mode voltage regulator is periodically turned on while in standby mode, and turned on whenever a refresh is requested. In addition, the active voltage regulator uses stronger transistors than those used by the standby-mode voltage regulator, and both the active-mode voltage regulator and the standby-mode voltage regulator are coupled to the voltage divider and the capacitor.
Public/Granted literature
- US20090296509A1 VOLTAGE REGULATOR CIRCUIT FOR A MEMORY CIRCUIT Public/Granted day:2009-12-03
Information query