Invention Grant
US08031553B2 Data strobe signal generating device and a semiconductor memory apparatus using the same 有权
数据选通信号发生装置和使用该数据选通信号的半导体存储装置

  • Patent Title: Data strobe signal generating device and a semiconductor memory apparatus using the same
  • Patent Title (中): 数据选通信号发生装置和使用该数据选通信号的半导体存储装置
  • Application No.: US12346986
    Application Date: 2008-12-31
  • Publication No.: US08031553B2
    Publication Date: 2011-10-04
  • Inventor: Hee-Jin Byun
  • Applicant: Hee-Jin Byun
  • Applicant Address: KR
  • Assignee: Hynix Semiconductor Inc.
  • Current Assignee: Hynix Semiconductor Inc.
  • Current Assignee Address: KR
  • Agency: Baker & McKenzie LLP
  • Priority: KR10-2008-0100257 20081013
  • Main IPC: G11C8/00
  • IPC: G11C8/00
Data strobe signal generating device and a semiconductor memory apparatus using the same
Abstract:
A data strobe signal generating device includes a preamble controller configured to generate a preamble signal enabled in synchronization with a first clock signal and disabled in synchronization with a second clock signal after an output enable signal is enabled, and a data strobe signal output unit configured to generate a data strobe signal in response to the preamble signal.
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