Invention Grant
US08031554B2 Circuit and method for controlling loading of write data in semiconductor memory device
有权
用于控制半导体存储器件中写入数据的加载的电路和方法
- Patent Title: Circuit and method for controlling loading of write data in semiconductor memory device
- Patent Title (中): 用于控制半导体存储器件中写入数据的加载的电路和方法
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Application No.: US12344687Application Date: 2008-12-29
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Publication No.: US08031554B2Publication Date: 2011-10-04
- Inventor: Sang-Hui Kim , Kwang-Hyun Kim
- Applicant: Sang-Hui Kim , Kwang-Hyun Kim
- Applicant Address: KR Gyeonggi-do
- Assignee: Hynix Semiconductor Inc.
- Current Assignee: Hynix Semiconductor Inc.
- Current Assignee Address: KR Gyeonggi-do
- Agency: IP & T Group LLP
- Priority: KR10-2008-0067199 20080710
- Main IPC: G11C8/00
- IPC: G11C8/00
Abstract:
A circuit for controlling the loading of write data in a semiconductor memory device includes a global bus; a data block configured to selectively load data of a predetermined first burst length or data of a second burst length, which is a half of the first burst length, for writing on the global bus in response to a control signal; and a memory bank configured to write the data of the first burst length or the data of the second burst length.
Public/Granted literature
- US20100008166A1 CIRCUIT AND METHOD FOR CONTROLLING LOADING OF WRITE DATA IN SEMICONDUCTOR MEMORY DEVICE Public/Granted day:2010-01-14
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