Invention Grant
US08032196B2 Josephson device, method of forming Josephson device and superconductor circuit
有权
约瑟夫逊装置,形成约瑟夫逊装置和超导体电路的方法
- Patent Title: Josephson device, method of forming Josephson device and superconductor circuit
- Patent Title (中): 约瑟夫逊装置,形成约瑟夫逊装置和超导体电路的方法
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Application No.: US11895256Application Date: 2007-08-23
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Publication No.: US08032196B2Publication Date: 2011-10-04
- Inventor: Hironori Wakana , Seiji Adachi , Koji Tsubone , Keiichi Tanabe
- Applicant: Hironori Wakana , Seiji Adachi , Koji Tsubone , Keiichi Tanabe
- Applicant Address: JP Hiroshima JP Tokyo
- Assignee: Chugoku Electric Power Co., Inc.,International Superconductivity Technology Center, The Juridical Foundation
- Current Assignee: Chugoku Electric Power Co., Inc.,International Superconductivity Technology Center, The Juridical Foundation
- Current Assignee Address: JP Hiroshima JP Tokyo
- Agency: Ladas & Parry LLP
- Priority: JP2006-226938 20060823
- Main IPC: H01L29/06
- IPC: H01L29/06 ; H01L27/00 ; H01L29/00 ; H01L39/22

Abstract:
A Josephson device includes a first superconducting electrode layer, a barrier layer and a second superconducting electrode layer that are successively stacked. The first and second superconducting electrode layers are made of an oxide superconductor material having (RE)1(AE)2Cu3Oy as a main component, where an element RE is at least one element selected from a group consisting of Y, La, Pr, Nd, Sm, Eu, Gd, Dy, Ho, Er, Tm, Yb and Lu, and an element AE is at least one element selected from a group consisting of Ba, Sr and Ca. The barrier layer is made of a material that includes the element RE, the element AE, Cu and oxygen, where in cations within the material forming the barrier layer, a Cu content is in a range of 35 At. % to 55 At. % and an RE content is in a range of 12 At. % to 30 At. %, and the barrier layer has a composition different from compositions of the first and second superconducting electrode layers.
Public/Granted literature
- US20080051292A1 Josephson device, method of forming Josephson device and superconductor circuit Public/Granted day:2008-02-28
Information query
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