Invention Grant
- Patent Title: Direct logical block addressing flash memory mass storage architecture
- Patent Title (中): 直接逻辑块寻址闪存大容量存储架构
-
Application No.: US12844354Application Date: 2010-07-27
-
Publication No.: US08032694B2Publication Date: 2011-10-04
- Inventor: Petro Estakhri , Mahmud Assar
- Applicant: Petro Estakhri , Mahmud Assar
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Leffert Jay & Polglaze, P.A.
- Main IPC: G06F13/00
- IPC: G06F13/00 ; G06F13/28 ; G06F9/26 ; G06F9/34

Abstract:
A nonvolatile semiconductor mass storage system and architecture can be substituted for a rotating hard disk. The system and architecture avoid an erase cycle each time information stored in the mass storage is changed. Erase cycles are avoided by programming an altered data file into an empty mass storage block rather than over itself as a hard disk would. Periodically, the mass storage will need to be cleaned up. These advantages are achieved through the use of several flags, and a map to correlate a logical block address of a block to a physical address of that block. In particular, flags are provided for defective blocks, used blocks, and old versions of a block. An array of volatile memory is addressable according to the logical address and stores the physical address.
Public/Granted literature
- US20100293324A1 DIRECT LOGICAL BLOCK ADDRESSING FLASH MEMORY MASS STORAGE ARCHITECTURE Public/Granted day:2010-11-18
Information query