Invention Grant
- Patent Title: Low-cost double-structure substrates and methods for their manufacture
- Patent Title (中): 低成本双层结构基材及其制造方法
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Application No.: US12470253Application Date: 2009-05-21
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Publication No.: US08035163B2Publication Date: 2011-10-11
- Inventor: Bich-Yen Nguyen , Carlos Mazure
- Applicant: Bich-Yen Nguyen , Carlos Mazure
- Applicant Address: FR Bernin
- Assignee: S.O.I.Tec Silicon on Insulator Technologies
- Current Assignee: S.O.I.Tec Silicon on Insulator Technologies
- Current Assignee Address: FR Bernin
- Agency: Winston & Strawn LLP
- Priority: FR0803697 20080630
- Main IPC: H01L29/66
- IPC: H01L29/66 ; H01L21/30 ; H01L21/46
Abstract:
In preferred embodiments, the invention provides substrates that include a support, a first insulating layer arranged on the support, a non-mono-crystalline semi-conducting layer arranged on the first insulating layer, a second insulating layer arranged on the non-mono-crystalline semi-conducting layer; and top layer disposed on the second insulating layer. Additionally, a first gate electrode can be formed on the top layer and a second gate electrode can be formed in the non-mono-crystalline semi-conducting layer. The invention also provides methods for manufacture of such substrates.
Public/Granted literature
- US20090321829A1 LOW-COST DOUBLE-STRUCTURE SUBSTRATES AND METHODS FOR THEIR MANUFACTURE Public/Granted day:2009-12-31
Information query
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