Invention Grant
- Patent Title: Semiconductor device and manufacturing method thereof
- Patent Title (中): 半导体装置及其制造方法
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Application No.: US12342755Application Date: 2008-12-23
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Publication No.: US08035192B2Publication Date: 2011-10-11
- Inventor: Tomoharu Fujii
- Applicant: Tomoharu Fujii
- Applicant Address: JP Nagano-shi, Nagano
- Assignee: Shinko Electric Industries Co., Ltd.
- Current Assignee: Shinko Electric Industries Co., Ltd.
- Current Assignee Address: JP Nagano-shi, Nagano
- Agency: Drinker Biddle & Reath LLP
- Priority: JP2007-335690 20071227
- Main IPC: H01L27/08
- IPC: H01L27/08
Abstract:
A semiconductor device has a semiconductor chip and through electrodes formed passing through the semiconductor chip. A ground layer connected to the through electrode and a patch antenna connected to the through electrode are provided through an inorganic insulating layer formed of SiO2 or SiN on a second face opposite to a first face (main face) of the semiconductor chip.
Public/Granted literature
- US20090166811A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF Public/Granted day:2009-07-02
Information query
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