Invention Grant
- Patent Title: Method of fabricating capacitor in semiconductor device
- Patent Title (中): 在半导体器件中制造电容器的方法
-
Application No.: US12343379Application Date: 2008-12-23
-
Publication No.: US08035193B2Publication Date: 2011-10-11
- Inventor: Kwan-Woo Do , Kee-Jeung Lee , Deok-Sin Kil , Young-Dae Kim , Jin-Hyock Kim , Kyung-Woong Park , Jeong-Yeop Lee
- Applicant: Kwan-Woo Do , Kee-Jeung Lee , Deok-Sin Kil , Young-Dae Kim , Jin-Hyock Kim , Kyung-Woong Park , Jeong-Yeop Lee
- Applicant Address: KR Icheon-si, Gyeonggi-do
- Assignee: Hynix Semiconductor Inc.
- Current Assignee: Hynix Semiconductor Inc.
- Current Assignee Address: KR Icheon-si, Gyeonggi-do
- Agency: Lowe Hauptman Ham & Berner LLP
- Priority: KR10-2008-0035965 20080418
- Main IPC: H01L27/00
- IPC: H01L27/00

Abstract:
A capacitor includes a bottom electrode, a dielectric layer and a top electrode over a substrate. A RuXTiYOZ film is included in at least one of the bottom and top electrodes, where x, y and z are positive real numbers. A method of fabricating the capacitor through a sequential formation of a bottom electrode, a dielectric layer and a top electrode over a substrate includes forming a RuXTiYOZ film during a formation of at least one of the bottom electrode and top electrode, where x, y and z are positive real numbers.
Public/Granted literature
- US20090261454A1 CAPACITOR IN SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME Public/Granted day:2009-10-22
Information query
IPC分类: