Invention Grant
US08035193B2 Method of fabricating capacitor in semiconductor device 失效
在半导体器件中制造电容器的方法

Method of fabricating capacitor in semiconductor device
Abstract:
A capacitor includes a bottom electrode, a dielectric layer and a top electrode over a substrate. A RuXTiYOZ film is included in at least one of the bottom and top electrodes, where x, y and z are positive real numbers. A method of fabricating the capacitor through a sequential formation of a bottom electrode, a dielectric layer and a top electrode over a substrate includes forming a RuXTiYOZ film during a formation of at least one of the bottom electrode and top electrode, where x, y and z are positive real numbers.
Information query
Patent Agency Ranking
0/0