Invention Grant
- Patent Title: High voltage generator and word line driving high voltage generator of memory device
- Patent Title (中): 高压发生器和字线驱动高压发生器的存储器件
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Application No.: US12724711Application Date: 2010-03-16
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Publication No.: US08035441B2Publication Date: 2011-10-11
- Inventor: Jae-Il Kim , Chang-Ho Do
- Applicant: Jae-Il Kim , Chang-Ho Do
- Applicant Address: KR Gyeonggi-do
- Assignee: Hynix Semiconductor Inc.
- Current Assignee: Hynix Semiconductor Inc.
- Current Assignee Address: KR Gyeonggi-do
- Agency: IP & T Group LLP
- Priority: KR10-2005-0090918 20050929; KR10-2006-0030937 20060405
- Main IPC: G05F1/10
- IPC: G05F1/10

Abstract:
A high voltage generator includes: a detection unit for comparing a reference voltage with a high voltage and detecting a voltage level of the high voltage; an oscillator selection unit for generating a first control signal and a second control signal in response to an output signal of the detection unit and a selection signal corresponding to a data operation mode; an oscillator for generating clock signals having different frequencies in response to the first control signal and the second control signal; and a pumping unit for generating the high voltage by performing a charge pumping operation in response to the clock signals.
Public/Granted literature
- US20100171545A1 HIGH VOLTAGE GENERATOR AND WORD LINE DRIVING HIGH VOLTAGE GENERATOR OF MEMORY DEVICE Public/Granted day:2010-07-08
Information query
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