Invention Grant
US08035927B2 EMR magnetic sensor having its active quantum well layer extending beyond an over-lying semiconductor layer end with tab and lead structure for improved electrical contact
有权
EMR磁传感器具有其有源量子阱层延伸超过超过半导体层的端部,具有用于改善电接触的突片和引线结构
- Patent Title: EMR magnetic sensor having its active quantum well layer extending beyond an over-lying semiconductor layer end with tab and lead structure for improved electrical contact
- Patent Title (中): EMR磁传感器具有其有源量子阱层延伸超过超过半导体层的端部,具有用于改善电接触的突片和引线结构
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Application No.: US12021085Application Date: 2008-01-28
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Publication No.: US08035927B2Publication Date: 2011-10-11
- Inventor: Thomas Dudley Boone, Jr. , Liesl Folks , Robert E. Fontana, Jr. , Bruce Alvin Gurney , Jordan Asher Katine , Sergio Nicoletti
- Applicant: Thomas Dudley Boone, Jr. , Liesl Folks , Robert E. Fontana, Jr. , Bruce Alvin Gurney , Jordan Asher Katine , Sergio Nicoletti
- Applicant Address: NL Amsterdam
- Assignee: Hitachi Global Storage Technologies Netherlands B.V.
- Current Assignee: Hitachi Global Storage Technologies Netherlands B.V.
- Current Assignee Address: NL Amsterdam
- Agency: Zilka-Kotab, PC
- Main IPC: G11B5/39
- IPC: G11B5/39

Abstract:
An extraordinary magnetoresistive sensor (EMR sensor) having a lead structure that is self aligned with a magnetic shunt structure. To form an EMR sensor according to an embodiment of the invention, a plurality of layers are deposited to form quantum well structure such as a two dimensional electron gas structure (2DEG). A first mask structure is deposited having two openings, and a material removal process is performed to remove portions of the sensor material from areas exposed by the openings. The distance between the two openings in the first mask defines a distance between a set of leads and the shunt structure. A non-magnetic metal is then deposited. A second mask structure is then formed to define shape of the leads.
Public/Granted literature
- US20090190269A1 SELF-ALIGNED COPLANAR STRUCTURE FOR NARROW-TRACK EMR DEVICES AND A METHOD FOR PRODUCING THE SAME Public/Granted day:2009-07-30
Information query
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