Invention Grant
US08035932B2 Lorentz magnetoresistive sensor with integrated signal amplification
有权
洛伦兹磁阻传感器具有集成的信号放大
- Patent Title: Lorentz magnetoresistive sensor with integrated signal amplification
- Patent Title (中): 洛伦兹磁阻传感器具有集成的信号放大
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Application No.: US11858816Application Date: 2007-09-20
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Publication No.: US08035932B2Publication Date: 2011-10-11
- Inventor: Bruce Alvin Gurney , Ernesto E. Marinero , Andrew Stuart Troup , David Arfon Williams , Joerg Wunderlich
- Applicant: Bruce Alvin Gurney , Ernesto E. Marinero , Andrew Stuart Troup , David Arfon Williams , Joerg Wunderlich
- Applicant Address: NL Amsterdam
- Assignee: Hitachi Global Storage Technologies Netherlands B.V.
- Current Assignee: Hitachi Global Storage Technologies Netherlands B.V.
- Current Assignee Address: NL Amsterdam
- Agency: Zilka-Kotab, PC
- Main IPC: G11B5/60
- IPC: G11B5/60

Abstract:
A Lorentz magnetoresistive sensor having integrated signal amplification. The sensor is constructed upon a substrate such as a semiconductor material, and an amplification circuit such as transistor is constructed directly into the substrate on which the magnetoresistive device is constructed. This integrated signal amplification greatly enhances sensor performance by eliminating a great deal of signal noise that would otherwise be added to the read signal.
Public/Granted literature
- US20090080118A1 EMR SENSOR WITH INTEGRATED SIGNAL AMPLIFICATION Public/Granted day:2009-03-26
Information query
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