Invention Grant
- Patent Title: Using higher current to read a triggered phase change memory
- Patent Title (中): 使用更高的电流来读取触发的相变存储器
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Application No.: US11093864Application Date: 2005-03-30
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Publication No.: US08036013B2Publication Date: 2011-10-11
- Inventor: Tyler Lowrey , Ward D. Parkinson , George A. Gordon
- Applicant: Tyler Lowrey , Ward D. Parkinson , George A. Gordon
- Applicant Address: US MI Troy
- Assignee: Ovonyx, Inc.
- Current Assignee: Ovonyx, Inc.
- Current Assignee Address: US MI Troy
- Agency: Trop, Pruner & Hu, P.C.
- Main IPC: G11C11/00
- IPC: G11C11/00
Abstract:
A phase change memory cell may be read by driving a current through the cell higher than its threshold current. A voltage derived from the selected column may be utilized to read a selected bit of a phase change memory. The read window or margin may be improved in some embodiments. A refresh cycle may be included at periodic intervals.
Public/Granted literature
- US20060227591A1 Using higher current to read a triggered phase change memory Public/Granted day:2006-10-12
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