Invention Grant
- Patent Title: Semiconductor memory device
- Patent Title (中): 半导体存储器件
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Application No.: US12563349Application Date: 2009-09-21
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Publication No.: US08036017B2Publication Date: 2011-10-11
- Inventor: Nobuyoshi Awaya , Takashi Nakano
- Applicant: Nobuyoshi Awaya , Takashi Nakano
- Applicant Address: JP Osaka
- Assignee: Sharp Kabushiki Kaisha
- Current Assignee: Sharp Kabushiki Kaisha
- Current Assignee Address: JP Osaka
- Agency: Nixon & Vanderhye, P.C.
- Priority: JP2008-248180 20080926
- Main IPC: G11C11/00
- IPC: G11C11/00

Abstract:
An inexpensive nonvolatile memory having high performance which makes random write and readout possible an unlimited number of times is provided. A unit memory cell is formed of a MISFET having a channel body that is electrically isolated from a semiconductor substrate and a resistance change element having a two-terminal structure with one end electrically connected to a drain of the MISFET. The MISFET functions as a volatile memory element, and the resistance change element functions as a nonvolatile memory element, so that information stored in the MISFET is copied to the resistance change element before the power is turned OFF and information stored in the resistance change element is transferred to the MISFET when the power is turned ON, and thus, the MISFET is used as a volatile memory which makes random write and readout possible.
Public/Granted literature
- US20100080038A1 SEMICONDUCTOR MEMORY DEVICE Public/Granted day:2010-04-01
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