Invention Grant
US08036022B2 Structure and method of using asymmetric junction engineered SRAM pass gates, and design structure
有权
使用不对称连接工程SRAM通孔的结构和方法，以及设计结构
- Patent Title: Structure and method of using asymmetric junction engineered SRAM pass gates, and design structure
- Patent Title (中): 使用不对称连接工程SRAM通孔的结构和方法，以及设计结构
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Application No.: US12190067Application Date: 2008-08-12
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Publication No.: US08036022B2Publication Date: 2011-10-11
- Inventor: Brent A. Anderson , Edward J. Nowak
- Applicant: Brent A. Anderson , Edward J. Nowak
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Roberts Mlotkowski Safran & Cole, P.C.
- Agent Richard Kotulak
- Main IPC: G11C11/00
- IPC: G11C11/00
Abstract:
A design structure, structure and method of using and/or manufacturing structures having asymmetric junction engineered SRAM pass gates is provided. The structure includes an SRAM cell having asymmetric junction-engineered SRAM pass gates with a high leakage junction and a low leakage junction. The asymmetric junction-engineered SRAM pass gates are connected between an internal node and a bit-line node. The high leakage junction is from a body to the internal node and the low leakage junction is from the body to the bit-line node.
Public/Granted literature
- US20100039854A1 Structure, Structure and Method of Using Asymmetric Junction Engineered SRAM Pass Gates Public/Granted day:2010-02-18
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