Invention Grant
US08036049B2 Semiconductor memory device including a global input/output line of a data transfer path and its surrounding circuits
有权
半导体存储器件包括数据传输路径的全局输入/输出线及其周围电路
- Patent Title: Semiconductor memory device including a global input/output line of a data transfer path and its surrounding circuits
- Patent Title (中): 半导体存储器件包括数据传输路径的全局输入/输出线及其周围电路
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Application No.: US12469864Application Date: 2009-05-21
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Publication No.: US08036049B2Publication Date: 2011-10-11
- Inventor: Ki Chon Park
- Applicant: Ki Chon Park
- Applicant Address: KR Kyoungki-do
- Assignee: Hynix Semiconductor Inc.
- Current Assignee: Hynix Semiconductor Inc.
- Current Assignee Address: KR Kyoungki-do
- Agency: Ladas & Parry LLP
- Priority: KR10-2007-0029686 20070327; KR10-2007-0029687 20070327
- Main IPC: G11C7/10
- IPC: G11C7/10 ; G11C7/22 ; G11C8/00
Abstract:
A semiconductor memory device includes an input/output line of a data transfer path and its surrounding circuits, comprising a controller which generates a control signal corresponding to command and address input in read and write operation; and a repeater which selects any one of the plurality of bank groups as the control signal to control data transfer between the selected bank group and an input/output pad.
Public/Granted literature
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