Invention Grant
- Patent Title: Semiconductor memory device and test method thereof
- Patent Title (中): 半导体存储器件及其测试方法
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Application No.: US12071552Application Date: 2008-02-22
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Publication No.: US08036052B2Publication Date: 2011-10-11
- Inventor: Hyong-yong Lee , Chan-sub Jun
- Applicant: Hyong-yong Lee , Chan-sub Jun
- Applicant Address: KR Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Gyeonggi-do
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: KR10-2007-0018053 20070222
- Main IPC: G11C7/00
- IPC: G11C7/00

Abstract:
Example embodiments disclose a semiconductor memory device and a test method thereof. The semiconductor memory device includes a memory cell array that provides first and second data groups at a first data rate and an output circuit, in a normal mode of operation, serially outputs the first and second data groups at a first data rate on an external terminal. In a test mode of operation, the output circuit outputs the first data group or the second data group at a second data rate on the external terminal in response to control signals, without switching the test mode. The second data rate may be lower than the first data rate.
Public/Granted literature
- US20080205174A1 Semiconductor memory device and test method thereof Public/Granted day:2008-08-28
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