Invention Grant
- Patent Title: Semiconductor memory device capable of suppressing a coupling effect of a test-disable transmission line
- Patent Title (中): 能够抑制测试禁止传输线的耦合效应的半导体存储器件
-
Application No.: US12134865Application Date: 2008-06-06
-
Publication No.: US08036053B2Publication Date: 2011-10-11
- Inventor: Jeong-Yoon Ahn , Ji-Eun Jang , Young-Jun Ku
- Applicant: Jeong-Yoon Ahn , Ji-Eun Jang , Young-Jun Ku
- Applicant Address: KR Gyeonggi-do
- Assignee: Hynix Semiconductor Inc.
- Current Assignee: Hynix Semiconductor Inc.
- Current Assignee Address: KR Gyeonggi-do
- Agency: IP & T Group LLP
- Priority: KR10-2007-0111351 20071102
- Main IPC: G11C29/00
- IPC: G11C29/00
Abstract:
Semiconductor device and semiconductor memory device include a plurality of internal circuits configured to perform test operations in response to their respective test mode signals and a plurality of test-mode control units configured to control the test operations of the internal circuits to be disabled in response to a test-off signal.
Public/Granted literature
- US20090116316A1 SEMICONDUCTOR DEVICE AND SEMICONDUCTOR MEMORY DEVICE Public/Granted day:2009-05-07
Information query
