Invention Grant
US08037272B2 Structure for memory chip for high capacity memory subsystem supporting multiple speed bus
有权
支持多速总线的高容量存储器子系统的存储器芯片结构
- Patent Title: Structure for memory chip for high capacity memory subsystem supporting multiple speed bus
- Patent Title (中): 支持多速总线的高容量存储器子系统的存储器芯片结构
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Application No.: US12053131Application Date: 2008-03-21
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Publication No.: US08037272B2Publication Date: 2011-10-11
- Inventor: Gerald K. Bartley , John M. Borkenhagen , Philip Raymond Germann
- Applicant: Gerald K. Bartley , John M. Borkenhagen , Philip Raymond Germann
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agent Roy W. Truelson
- Main IPC: G06F13/18
- IPC: G06F13/18

Abstract:
A design structure is provided for a memory module containing an interface for receiving memory access commands from an external source, in which a first portion of the interface receives memory access data at a first bus frequency and a second portion of the interface receives memory access data at a second different bus frequency. Preferably, the memory module contains a second interface for re-transmitting memory access data, also operating at dual frequency. The memory module is preferably used in a high-capacity memory subsystem organized in a tree configuration in which data accesses are interleaved. Preferably, the memory module has multiple-mode operation, one of which supports dual-speed buses for receiving and re-transmitting different parts of data access commands, and another of which supports conventional daisy-chaining.
Public/Granted literature
- US20090006781A1 Structure for Memory Chip for High Capacity Memory Subsystem Supporting Multiple Speed Bus Public/Granted day:2009-01-01
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