Invention Grant
- Patent Title: Semiconductor device
- Patent Title (中): 半导体器件
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Application No.: US12340549Application Date: 2008-12-19
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Publication No.: US08037384B2Publication Date: 2011-10-11
- Inventor: Takumi Hasegawa , Motoyuki Sato , Tomoji Nakamura , Nobuo Konami , Jun Matsushima
- Applicant: Takumi Hasegawa , Motoyuki Sato , Tomoji Nakamura , Nobuo Konami , Jun Matsushima
- Applicant Address: JP Tokyo
- Assignee: Hitachi, Ltd.
- Current Assignee: Hitachi, Ltd.
- Current Assignee Address: JP Tokyo
- Agency: Miles & Stockbridge P.C.
- Priority: JP2007-336688 20071227
- Main IPC: G01R31/28
- IPC: G01R31/28

Abstract:
A semiconductor device includes a test target circuit; scan chains that enable scanning of the test target circuit; a first random number generation circuit that forms test patterns supplied to the scan chains; a second random number generation circuit that is provided separately from the first random number generation circuit; and a random number control circuit that uses the random numbers generated by the second random number generation circuit to change the random numbers generated by the first random number generation circuit. In a test of the semiconductor device, since a period of a clock of a scan chain does not need to be longer than that of a clock of a pattern generator, the number of clocks of the pattern generator needed for a test can be prevented from increasing. Accordingly, a test time can be prevented from increasing.
Public/Granted literature
- US20090172488A1 SEMICONDUCTOR DEVICE Public/Granted day:2009-07-02
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