Invention Grant
US08039042B2 Low voltage electron source with self aligned gate apertures, fabrication method thereof, and luminous display using the electron source
失效
具有自对准栅极孔径的低电压电子源，其制造方法和使用电子源的发光显示器
- Patent Title: Low voltage electron source with self aligned gate apertures, fabrication method thereof, and luminous display using the electron source
- Patent Title (中): 具有自对准栅极孔径的低电压电子源，其制造方法和使用电子源的发光显示器
-
Application No.: US11927323Application Date: 2007-10-29
-
Publication No.: US08039042B2Publication Date: 2011-10-18
- Inventor: Zhidan Li Tolt
- Applicant: Zhidan Li Tolt
- Main IPC: B05D5/12
- IPC: B05D5/12 ; B44C1/22
Abstract:
A method of fabricating an electron source having a self-aligned gate aperture is disclosed. A substrate is deposited on a first conductive layer. Over the first conductive layer an emitter layer is deposited. The emitter layer includes one or a plurality of spaced-apart nano-structures and a solid surface with nano-structures protruding above the surface. An insulator is conformally deposited over the emitter layer surface and forms a post from each protruding nano-structure. A second conductive layer is deposited over the insulator and the second conductive layer and the insulator are removed from the nano-structures such that apertures are formed in the second conductive layer and at least the ends of the nano-structures are exposed at the centers of said apertures.
Public/Granted literature
Information query
