Invention Grant
US08039868B2 Structure and method for an electrostatic discharge (ESD) silicon controlled rectifier (SCR) structure
有权
静电放电（ESD）可控硅整流（SCR）结构的结构和方法
- Patent Title: Structure and method for an electrostatic discharge (ESD) silicon controlled rectifier (SCR) structure
- Patent Title (中): 静电放电（ESD）可控硅整流（SCR）结构的结构和方法
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Application No.: US12342228Application Date: 2008-12-23
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Publication No.: US08039868B2Publication Date: 2011-10-18
- Inventor: Robert J. Gauthier, Jr. , Junjun Li , Aniket Srivastava
- Applicant: Robert J. Gauthier, Jr. , Junjun Li , Aniket Srivastava
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Roberts Mlotkowski Safran & Cole, P.C.
- Agent Anthony J. Canale
- Main IPC: H01L29/72
- IPC: H01L29/72 ; H01L29/74
Abstract:
A design structure is embodied in a machine readable medium for designing, manufacturing, or testing a design. The design structure includes first and second silicon controlled rectifiers (SCRs) formed in a substrate. Further, the first and the second SCRs each include at least one component commonly shared between the first and the second SCRs.
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Information query
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