Invention Grant
- Patent Title: Gallium nitride device substrate containing a lattice parameter altering element
- Patent Title (中): 含有晶格参数改变元件的氮化镓器件衬底
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Application No.: US11838467Application Date: 2007-08-14
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Publication No.: US08039869B2Publication Date: 2011-10-18
- Inventor: Steven D. Lester , Virginia M. Robbins , Scott W. Corzine
- Applicant: Steven D. Lester , Virginia M. Robbins , Scott W. Corzine
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Haynes and Boone, LLP
- Main IPC: H01L33/04
- IPC: H01L33/04 ; H01L29/15
Abstract:
A gallium nitride device substrate comprises a layer of gallium nitride containing an additional lattice parameter altering element located over a substitute substrate.
Public/Granted literature
- US20070278622A1 Gallium Nitride Device Substrate Contaning A Lattice Parameter Altering Element Public/Granted day:2007-12-06
Information query
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