Invention Grant
US08039872B2 Nitride semiconductor device including a group III nitride semiconductor structure
有权
包括III族氮化物半导体结构的氮化物半导体器件
- Patent Title: Nitride semiconductor device including a group III nitride semiconductor structure
- Patent Title (中): 包括III族氮化物半导体结构的氮化物半导体器件
-
Application No.: US12219671Application Date: 2008-07-25
-
Publication No.: US08039872B2Publication Date: 2011-10-18
- Inventor: Hirotaka Otake
- Applicant: Hirotaka Otake
- Applicant Address: JP Kyoto
- Assignee: Rohm Co., Ltd.
- Current Assignee: Rohm Co., Ltd.
- Current Assignee Address: JP Kyoto
- Agency: Rabin & Berdo, P.C.
- Priority: JP2007-193410 20070725
- Main IPC: H01L29/66
- IPC: H01L29/66
Abstract:
A nitride semiconductor device according to the present invention includes a Group III nitride semiconductor; and an insulating film containing oxygen formed on the surface of the Group III nitride semiconductor, wherein the nitrogen concentration in a region provided with the insulating film is higher than the nitrogen concentration in a region not provided with the insulating film on the surface of the group III nitride semiconductor.
Public/Granted literature
- US20090026556A1 Nitride semiconductor device and method for producing nitride semiconductor device Public/Granted day:2009-01-29
Information query
IPC分类:
