Invention Grant
US08039879B2 Semiconductor device having a control circuit and method of its manufacture
有权
具有控制电路的半导体器件及其制造方法
- Patent Title: Semiconductor device having a control circuit and method of its manufacture
- Patent Title (中): 具有控制电路的半导体器件及其制造方法
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Application No.: US12257125Application Date: 2008-10-23
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Publication No.: US08039879B2Publication Date: 2011-10-18
- Inventor: Katsunori Ueno
- Applicant: Katsunori Ueno
- Applicant Address: JP
- Assignee: Fuji Electric Co., Ltd.
- Current Assignee: Fuji Electric Co., Ltd.
- Current Assignee Address: JP
- Agency: Rossi, Kimms & McDowell LLP
- Priority: JP2007-276453 20071024
- Main IPC: H01L27/06
- IPC: H01L27/06
Abstract:
A semiconductor has an IGBT active section and a control circuit section for detecting an IGBT abnormal state. A collector region is formed on the back surface side (i.e., on the IGBT collector side) in a selective manner, namely right under the IGBT active section.
Public/Granted literature
- US20090114946A1 SEMICONDUCTOR DEVICE HAVING A CONTROL CIRCUIT AND METHOD OF ITS MANUFACTURE Public/Granted day:2009-05-07
Information query
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