Conductive spacers for semiconductor devices and methods of forming

Invention Grant

US08039888B2 Conductive spacers for semiconductor devices and methods of forming 有权

Title translation: 用于半导体器件的导电间隔件及其形成方法

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Patent Title: Conductive spacers for semiconductor devices and methods of forming
Patent Title (中): 用于半导体器件的导电间隔件及其形成方法
Application No.: US11848597

Application Date: 2007-08-31
Publication No.: US08039888B2

Publication Date: 2011-10-18
Inventor: Gary Bela Bronner , David Michael Fried , Jeffrey Peter Gambino , Leland Chang , Ramachandra Divakaruni , Haizhou Yin , Gregory Costrini , Viraj Y. Sardesai
Applicant: Gary Bela Bronner , David Michael Fried , Jeffrey Peter Gambino , Leland Chang , Ramachandra Divakaruni , Haizhou Yin , Gregory Costrini , Viraj Y. Sardesai
Applicant Address: US NY Armonk
Assignee: International Business Machines Corporation
Current Assignee: International Business Machines Corporation
Current Assignee Address: US NY Armonk
Agent Wenjie Li
Main IPC: H01L29/788
IPC: H01L29/788 ; H01L21/336

Conductive spacers for semiconductor devices and methods of forming

Abstract:

A method of forming a conductive spacer on a semiconductor device. The method includes depositing a polysilicon layer on the semiconductor device, selectively implanting dopant ions in the polysilicon layer on a first side of a transistor region of the semiconductor device to define a conductive spacer area, and removing the polysilicon layer except for the conductive spacer area. Optionally, a silicidation process can be performed on the conductive spacer area so that the conductive spacer is made up of metal silicide.

Abstract(Chinese):

一种在半导体器件上形成导电间隔物的方法。该方法包括在半导体器件上沉积多晶硅层，在半导体器件的晶体管区域的第一侧上选择性地将多晶硅层中的掺杂剂离子注入以限定导电间隔区，以及除去导电间隔区之外的多晶硅层。任选地，可以在导电间隔物区域上进行硅化处理，使得导电间隔物由金属硅化物构成。

Public/Granted literature

US20080272398A1 CONDUCTIVE SPACERS FOR SEMICONDUCTOR DEVICES AND METHODS OF FORMING Public/Granted day:2008-11-06

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L29/00	专门适用于整流、放大、振荡或切换，并具有至少一个电位跃变势垒或表面势垒的半导体器件；具有至少一个电位跃变势垒或表面势垒，例如PN结耗尽层或载流子集结层的电容器或电阻器；半导体本体或其电极的零部件（H01L31/00至H01L47/00，H01L51/05优先；除半导体或其电极之外的零部件入H01L23/00；由在一个共用衬底内或其上形成的多个固态组件组成的器件入H01L27/00）
H01L29/66	.按半导体器件的类型区分的
H01L29/68	..只能通过对一个不通有待整流、放大或切换的电流的电极供给电流或施加电位方可进行控制的（H01L29/96优先）
H01L29/76	...单极器件
H01L29/772	....场效应晶体管
H01L29/78	.....由绝缘栅产生场效应的
H01L29/788	......带有浮栅的