Invention Grant
- Patent Title: Apparatus of memory array using finfets
- Patent Title (中): 使用finfets的存储器阵列的装置
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Application No.: US12784526Application Date: 2010-05-21
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Publication No.: US08039904B2Publication Date: 2011-10-18
- Inventor: Ronald Kakoschke , Klaus Schruefer
- Applicant: Ronald Kakoschke , Klaus Schruefer
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Agent Philip H. Schlazer
- Main IPC: H01L21/021
- IPC: H01L21/021
Abstract:
A memory cell includes a FinFET select device and a memory element. In some embodiments a memory cell has a contact element coupled between a surface of the fin and the memory element.
Public/Granted literature
- US20100252895A1 APPARATUS OF MEMORY ARRAY USING FINFETS Public/Granted day:2010-10-07
Information query
