Invention Grant
- Patent Title: MEMS sensor
- Patent Title (中): MEMS传感器
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Application No.: US12485696Application Date: 2009-06-16
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Publication No.: US08039911B2Publication Date: 2011-10-18
- Inventor: Goro Nakatani , Mizuho Okada , Nobuhisa Yamashita
- Applicant: Goro Nakatani , Mizuho Okada , Nobuhisa Yamashita
- Applicant Address: JP Kyoto
- Assignee: Rohm Co., Ltd.
- Current Assignee: Rohm Co., Ltd.
- Current Assignee Address: JP Kyoto
- Agency: Rabin & Berdo, PC
- Priority: JP2008-156937 20080616
- Main IPC: H01L29/84
- IPC: H01L29/84 ; H01L21/00 ; H04R19/04

Abstract:
The MEMS sensor according to the present invention includes a diaphragm. In the diaphragm, an angle formed by two straight lines connecting supporting portions and the center of a main portion with one another respectively is set to satisfy the relation of the following formula (1): (A2/A1)/(B2/B1)≧1 (1) A2: maximum vibrational amplitude of the diaphragm in a case of working a physical quantity of a prescribed value on the diaphragm A1: maximum vibrational amplitude of the diaphragm in a case of working the physical quantity on the diaphragm in an omitting structure obtained by omitting one of the supporting portions from the diaphragm B2: maximum stress caused in the diaphragm in the case of working the physical quantity on the diaphragm B1: maximum stress caused in the diaphragm in the case of working the physical quantity on the diaphragm in the omitting structure.
Public/Granted literature
- US20090309173A1 MEMS SENSOR Public/Granted day:2009-12-17
Information query
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