An electrical interconnect within a semiconductor device consists of a substrate with a plurality of active devices. A contact pad is formed on the substrate in electrical contact with the plurality of active devices. A passivation layer, first barrier layer, adhesion layer, and seed layer are formed over the substrate. An inner core pillar including a hollow interior is centered over and formed within a footprint of the contact pad. A second barrier layer and a wetting layer are formed over the single cylindrical inner core pillar and hollow interior. A spherical bump is formed around the second barrier layer, wetting layer, and single cylindrical inner core pillar. A footprint of the spherical bump encompasses the footprint of the contact pad. The spherical bump is electrically connected to the contact pad.