Invention Grant
- Patent Title: Semiconductor device having seal ring structure
- Patent Title (中): 具有密封环结构的半导体器件
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Application No.: US12219527Application Date: 2008-07-23
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Publication No.: US08039963B2Publication Date: 2011-10-18
- Inventor: Tatsuya Usami
- Applicant: Tatsuya Usami
- Applicant Address: JP Kawasaki-shi, Kanagawa
- Assignee: Renesas Electronics Corporation
- Current Assignee: Renesas Electronics Corporation
- Current Assignee Address: JP Kawasaki-shi, Kanagawa
- Agency: McGinn IP Law Group, PLLC
- Priority: JP2007-216217 20070822
- Main IPC: H01L23/40
- IPC: H01L23/40
Abstract:
A semiconductor device of the present invention includes a seal ring structure. The seal ring structure includes a first metal layer including a though hole, the through hole having a bottom portion filled with an insulating material, and a second metal layer formed on the first metal layer. The second metal layer has a projected portion projecting from a bottom of the second metal layer and the projected portion is inserted into a top portion of the through hole.
Public/Granted literature
- US20090051011A1 Semiconductor device having seal ring structure and method of forming the same Public/Granted day:2009-02-26
Information query
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