Invention Grant
- Patent Title: Light-emitting device
- Patent Title (中): 发光装置
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Application No.: US12251644Application Date: 2008-10-15
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Publication No.: US08040047B2Publication Date: 2011-10-18
- Inventor: Takahiro Ushikubo , Satoshi Seo
- Applicant: Takahiro Ushikubo , Satoshi Seo
- Applicant Address: JP
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP
- Agency: Husch Blackwell LLP
- Priority: JP2007-272227 20071019
- Main IPC: H01L51/52
- IPC: H01L51/52 ; H01L51/54

Abstract:
To provide a long lifetime light-emitting element, in particular, to provide a long lifetime white light-emitting element, and to provide a light-emitting element having high luminous efficiency, in particular, to provide a white light-emitting element having high luminous efficiency. In a light-emitting element having, between an anode and a cathode, a first light-emitting layer containing a first light-emitting substance and a second light-emitting layer containing a second light-emitting substance which is provided to be in contact with the first light-emitting layer, the first light-emitting layer is divided into a layer provided on the anode side and a layer provided on the cathode side. At this time, a host material having a hole-transporting property is used for the layer provided on the anode side, and a host material having an electron-transporting property is used for the layer provided on the cathode side.
Public/Granted literature
- US20090102366A1 Light-Emitting Device Public/Granted day:2009-04-23
Information query
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