Invention Grant
- Patent Title: Semiconductor integrated circuit
- Patent Title (中): 半导体集成电路
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Application No.: US12662357Application Date: 2010-04-13
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Publication No.: US08040165B2Publication Date: 2011-10-18
- Inventor: Motoshi Azetsuji
- Applicant: Motoshi Azetsuji
- Applicant Address: JP Kawasaki-shi, Kanagawa
- Assignee: Renesas Electronics Corporation
- Current Assignee: Renesas Electronics Corporation
- Current Assignee Address: JP Kawasaki-shi, Kanagawa
- Agency: McGinn Intellectual Property Law Group, PLLC
- Priority: JP2009-108688 20090428
- Main IPC: H03B1/00
- IPC: H03B1/00

Abstract:
Provided is a semiconductor integrated circuit including: a differential driver that is disposed between a first power supply and a second power supply and drives differential input signals to generate differential output signals; and a control signal generation circuit that generates a first control signal for controlling a voltage level of each of the differential output signals. When each of a pair of output signals forming the differential output signals is changed from a voltage level corresponding to the first power supply to a voltage level corresponding to the second power supply, an amount of change in the voltage level of the corresponding output signal is controlled based on the first power supply.
Public/Granted literature
- US20100271102A1 Semiconductor integrated circuit Public/Granted day:2010-10-28
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