Invention Grant
- Patent Title: Low noise cascode amplifier
- Patent Title (中): 低噪声共源共栅放大器
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Application No.: US12457927Application Date: 2009-06-25
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Publication No.: US08040188B2Publication Date: 2011-10-18
- Inventor: Bo-Jr Huang , Huei Wang
- Applicant: Bo-Jr Huang , Huei Wang
- Applicant Address: TW Taipei
- Assignee: National Taiwan University
- Current Assignee: National Taiwan University
- Current Assignee Address: TW Taipei
- Agency: Rosenberg, Klein & Lee
- Priority: TW98112792A 20090417
- Main IPC: H03F1/22
- IPC: H03F1/22

Abstract:
The present invention relates to a low noise cascode amplifier comprising a first transistor, a second transistor, a third transistor, a first inductor, and a second inductor. Furthermore, the first transistor can connect with the second transistor via the first inductor, and the second transistor can connect with the third transistor via the second inductor; thereby, a cascode device can be formed. The inductor and the parasitic capacitances can resonate at high frequency, so that the noise figure of the cascode amplifier can be reduced.
Public/Granted literature
- US20100264988A1 Low noise cascode amplifier Public/Granted day:2010-10-21
Information query
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