Invention Grant
- Patent Title: Thin film transistor array panel and manufacturing method of the same
- Patent Title (中): 薄膜晶体管阵列及其制造方法相同
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Application No.: US12421095Application Date: 2009-04-09
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Publication No.: US08040449B2Publication Date: 2011-10-18
- Inventor: Seok-Je Seong , Yoon-Seok Choi , Hyung-Don Na
- Applicant: Seok-Je Seong , Yoon-Seok Choi , Hyung-Don Na
- Applicant Address: KR
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR
- Agency: Cantor Colburn LLP
- Priority: KR10-2008-0043611 20080509
- Main IPC: G02F1/136
- IPC: G02F1/136 ; G02F1/1343 ; H01L27/01

Abstract:
A thin film transistor array panel includes a substrate; a gate electrode formed on the substrate; a data line formed on the substrate; a gate insulating layer formed on the data line and the gate electrode, and having a first contact hole exposing the gate electrode, and a second contact hole exposing the data line; a gate line intersecting the data line, and connected to the gate electrode through the first contact hole; a semiconductor formed the gate insulating layer, and including a channel of a thin film transistor; a source electrode connected to the data line through the second contact hole; a drain electrode opposite to the source electrode with respect to the channel on the semiconductor; a passivation layer having a third contact hole exposing the drain electrode; and a pixel electrode connected to the drain electrode through the third contact hole are included.
Public/Granted literature
- US20090278128A1 THIN FILM TRANSISTOR ARRAY PANEL AND MANUFACTURING METHOD OF THE SAME Public/Granted day:2009-11-12
Information query
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