A semiconductor device of the present invention includes an insulating substrate, a nonvolatile memory formed above the insulating substrate and having a memory holding portion, and at least one light-shielding body covering an upper side, an under side, or both sides of the memory holding portion, wherein at least one of the light-shielding bodies is installed in such a way that a protrusion degree of the light-shielding body, which is defined by (a length of the light-shielding body protruded from the memory holding portion)/(a distance between the light-shielding body and the memory holding portion), is 0.1 or more.