Invention Grant
- Patent Title: Defect inspecting method and defect inspecting apparatus
- Patent Title (中): 缺陷检查方法和缺陷检查装置
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Application No.: US12376407Application Date: 2007-08-07
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Publication No.: US08040504B2Publication Date: 2011-10-18
- Inventor: Misako Saito , Teruyuki Hayashi , Kaoru Fujiwara
- Applicant: Misako Saito , Teruyuki Hayashi , Kaoru Fujiwara
- Applicant Address: JP Tokyo
- Assignee: Tokyo Electron Limited
- Current Assignee: Tokyo Electron Limited
- Current Assignee Address: JP Tokyo
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2006-220162 20060811
- International Application: PCT/JP2007/065451 WO 20070807
- International Announcement: WO2008/018463 WO 20080214
- Main IPC: G01N21/00
- IPC: G01N21/00
Abstract:
Provided is a method and apparatus for inspecting a defect of a shape formed on a substrate. Primary inspection is sequentially performed on specific patterns in a plurality of divided regions of the substrate by using an optical method, and one or more regions on which secondary inspection is to be performed are selected from the regions. One or more defects are detected by performing the secondary inspection using an electron beam on the selected regions.
Public/Granted literature
- US20100245812A1 DEFECT INSPECTING METHOD AND DEFECT INSPECTING APPARATUS Public/Granted day:2010-09-30
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