Invention Grant
- Patent Title: Vertical cavity surface emitting laser and method of manufacturing thereof
- Patent Title (中): 垂直腔面发射激光器及其制造方法
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Application No.: US12656166Application Date: 2010-01-20
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Publication No.: US08040934B2Publication Date: 2011-10-18
- Inventor: Yuji Masui , Takahiro Arakida , Terukazu Naruse , Rintaro Koda , Naoki Jogan
- Applicant: Yuji Masui , Takahiro Arakida , Terukazu Naruse , Rintaro Koda , Naoki Jogan
- Applicant Address: JP Tokyo
- Assignee: Sony Corporation
- Current Assignee: Sony Corporation
- Current Assignee Address: JP Tokyo
- Agency: Rader, Fishman & Grauer PLLC
- Priority: JP2009-026675 20090206
- Main IPC: H01S5/00
- IPC: H01S5/00 ; H01S3/00

Abstract:
A vertical cavity surface emitting laser capable of reducing parasitic capacitance while suppressing power consumption, and a method of manufacturing thereof are provided. The vertical cavity surface emitting laser includes a columnar mesa including, on a substrate, a first multilayer reflector, an active layer, and a second multilayer reflector in order from the substrate side, and also including a current narrowing layer. The columnar portion of the mesa including the active layer and the current narrowing layer is formed within a region opposed to the first multilayer reflector and a region opposed to the second multilayer reflector, and a cross section area of the columnar portion is smaller than a cross section area of the second multilayer reflector.
Public/Granted literature
- US20100202486A1 Vertical cavity surface emitting laser and method of manufacturing thereof Public/Granted day:2010-08-12
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