Invention Grant
- Patent Title: Nitride semiconductor light-emitting device comprising multiple semiconductor layers having substantially uniform N-type dopant concentration
- Patent Title (中): 氮化物半导体发光器件包括具有基本均匀的N型掺杂剂浓度的多个半导体层
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Application No.: US12161014Application Date: 2007-01-17
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Publication No.: US08044430B2Publication Date: 2011-10-25
- Inventor: Akihiko Ishibashi , Toshiya Yokogawa
- Applicant: Akihiko Ishibashi , Toshiya Yokogawa
- Applicant Address: JP Osaka
- Assignee: Panasonic Corporation
- Current Assignee: Panasonic Corporation
- Current Assignee Address: JP Osaka
- Agency: Renner, Otto, Boisselle & Sklar, LLP
- Priority: JP2006-009485 20060118
- International Application: PCT/JP2007/050562 WO 20070117
- International Announcement: WO2007/083647 WO 20070726
- Main IPC: H01L33/00
- IPC: H01L33/00
Abstract:
A nitride semiconductor light-emitting device according to the present invention includes a nitride based semiconductor substrate 10 and a nitride based semiconductor multilayer structure that has been formed on the semiconductor substrate 10. The multilayer structure includes an active layer 16 that produces emission and multiple semiconductor layers 12, 14 and 15 that have been stacked one upon the other between the active layer 16 and the substrate 10 and that include an n-type dopant. Each and every one of the semiconductor layers 12, 14 and 15 includes Al atoms.
Public/Granted literature
- US20100148145A1 NITRIDE SEMICONDUCTOR LIGHT-EMITTING DEVICE Public/Granted day:2010-06-17
Information query
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