Invention Grant
- Patent Title: Semiconductor device with fluorine-containing interlayer dielectric film to prevent chalcogenide material layer from exfoliating from the interlayer dielectric film and process for producing the same
- Patent Title (中): 具有含氟层间绝缘膜的半导体装置，用于防止硫族化物材料层从层间电介质膜剥落及其制造方法
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Application No.: US12279916Application Date: 2006-02-28
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Publication No.: US08044489B2Publication Date: 2011-10-25
- Inventor: Yuichi Matsui
- Applicant: Yuichi Matsui
- Applicant Address: JP Kanagawa
- Assignee: Renesas Electronics Corporation
- Current Assignee: Renesas Electronics Corporation
- Current Assignee Address: JP Kanagawa
- Agency: Mattingly & Malur, P.C.
- International Application: PCT/JP2006/303733 WO 20060228
- International Announcement: WO2007/099595 WO 20070907
- Main IPC: H01L23/52
- IPC: H01L23/52
Abstract:
A semiconductor device having a phase-change memory cell comprises an interlayer dielectric film formed of, for example, SiOF formed on a select transistor formed on a main surface of a semiconductor substrate, a chalcogenide material layer formed of, for example, GeSbTe extending on the interlayer dielectric film, and a top electrode formed on the chalcogenide material layer. A fluorine concentration in an interface between the interlayer dielectric film and the chalcogenide material layer is higher than a fluorine concentration in an interface between the chalcogenide material layer and the top electrode.
Public/Granted literature
- US20090050871A1 SEMICONDUCTOR DEVICE AND PROCESS FOR PRODUCING THE SAME Public/Granted day:2009-02-26
Information query
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