Invention Grant
- Patent Title: Light emitting device and manufacturing method of the same
- Patent Title (中): 发光器件及其制造方法相同
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Application No.: US12157594Application Date: 2008-06-11
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Publication No.: US08044580B2Publication Date: 2011-10-25
- Inventor: Shunpei Yamazaki , Satoshi Seo , Hideaki Kuwabara
- Applicant: Shunpei Yamazaki , Satoshi Seo , Hideaki Kuwabara
- Applicant Address: JP Atsugi-shi, Kanagawa-ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Atsugi-shi, Kanagawa-ken
- Agency: Husch Blackwell LLP
- Priority: JP2002-125970 20020426
- Main IPC: H05B33/00
- IPC: H05B33/00

Abstract:
A light emitting device structure is provided so as to increase the amount of light which is taken out in a certain direction after emitted from a light emitting element, as well as a method of manufacturing this light emitting device. In the present invention, an upper end portion of an insulating material 19 that covers an end portion of a first electrode 18 is formed to have a curved surface having a radius of curvature, a second electrode 23a is formed to have a slant face as going from its center portion toward its end portion along the curved surface. Light emitted from a light emitting layer having an organic material 20 that is formed on the second electrode 23a is reflected at the slant face of the second electrode 23a to increase the total amount of light taken out in the direction.
Public/Granted literature
- US20080252207A1 Light emitting device and manufacturing method of the same Public/Granted day:2008-10-16
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