Invention Grant
- Patent Title: Semiconductor device with thermal fault detection
- Patent Title (中): 具有热故障检测的半导体器件
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Application No.: US12613761Application Date: 2009-11-06
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Publication No.: US08044674B2Publication Date: 2011-10-25
- Inventor: Alberto Zanardi , Erich Scheikl , Robert Illing , Herbert Hopfgartner
- Applicant: Alberto Zanardi , Erich Scheikl , Robert Illing , Herbert Hopfgartner
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Agency: Slater & Matsil, L.L.P.
- Main IPC: G01R31/3187
- IPC: G01R31/3187

Abstract:
A semiconductor device with a thermal fault detection is disclosed. According to one example of the invention such a semiconductor device includes a semiconductor chip including an active area. It further includes a temperature sensor arrangement that provides a measurement signal dependent on the temperature in or close to the active area, the measurement signal having a slope of a time-dependent steepness, and an evaluation circuit that is configured to provide an output signal that is representative of the steepness of the slope of the measurement signal and further configured to signal a steepness higher than a predefined threshold.
Public/Granted literature
- US20110109372A1 Semiconductor Device with Thermal Fault Detection Public/Granted day:2011-05-12
Information query
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